RAM - Page 25

Hardware companies Corsair and ASUS have teamed up to create the fastest production DDR4 memory kit for use with the Intel Core i7 Extreme Edition CPUs. The new Corsair Dominator Platinum DDR4 memory kits are available in 3000MHz, 3200MHz and 3300MhZ speeds. The new RAM kits work especially well using the ASUS X99 Deluxe and Rampage V Extreme motherboards for Intel Core i7 CPU fans.

This is a significant collaboration, as DDR3 speeds increased from 800MHz up to 1600-1866MHz, but the DDR4 modules introduced by Corsair should immediately provide impressive benchmarks. The Corsair DDR4 memory kits are available now for the Vengeance LPX and Dominator Platinum lines - and the ASUS X99-Deluxe and Rampage and V Extreme motherboards are available now.

"Our rigorous validation with ASUS has enabled us to make Dominator Platinum 3300MHz the fastest desktop DDR4 memory available at launch," said Thi La, Corsair COO, in a press statement. "Our OC team and engineers are excited to see such performance headroom the new Intel platform and are looking forward to releasing even faster kits in the near future."

Samsung just announced today that they have begun mass production of the industry's first 3D TSV technology based DDR4 modules for enterprise related products. Samsung has said: "announcing that we have begun mass producing the industry's first 64GB DDR4 RDIMMs that use 3D 'through silicon via' (TSV) package technology. The new 64GB TSV module performs twice as fast as a 64GB module that uses wire bonding packaging, while consuming approximately half the power."

"Samsung's volume production of 3D TSV modules marks a new milestone in the history of memory technology, following the company's initial production of 3D Vertical NAND (V-NAND) flash memory last year. While 3D V-NAND technology embraces high-rise vertical structures of cell arrays inside a monolithic die, 3D TSV is an innovative packaging technology that vertically interconnects stacked dies. With its introduction of the new TSV modules, Samsung has further strengthened its technological leadership in the '3D memory' era. Samsung has worked on improving 3D TSV technology since it developed 40nm-class* 8GB DRAM RDIMMs in 2010 and 30nm-class* 32GB DRAM RDIMMs in 2011 using 3D TSV. This year, Samsung started operating a new manufacturing system dedicated to TSV packaging, for mass producing the new server modules."

In order for Samsung to build these 3D TSV modules, the dies are ground down to a few dozen micrometers, and then pierced to contain hundreds of fine holes. Electrodes passing through the holes allow them to be vertically connected and stacked. In the future Samsung believes they will be able to stack more than four dies using 3D TSV technology.

Corsair has just taken the wraps off of its new DDR4 RAM, where it has announced two DDR4 kits in its Dominator Platinum range. Both of the new DDR4-powered products are 16GB kits, with a 2800MHz kit, and a 2666MHz kit.

The faster of the two is the Dominator Platinum Series 16GB (4 x 4GB) DDR4 DRAM 2800MHz C16 Memory Kit (CMD16GX4M4A2800C16), while the second kit is the Dominator Platinum Series 16GB (4 x 4GB) DDR4 DRAM 2666MHz C15 Memory Kit (CMD16GX4M4A2666C15). Both of the new DDR4 kits include XMP 2.0, which allows for super easy automatic overclocking. Both of the kids also support Corsair Link, so that you can use the software for temperature monitoring, and even the ability to enhance the white LED lighting on the RAM itself.

Corsair offers a limited lifetime warranty on its Dominator Platinum RAM, so you won't have to worry about spending a considerable sum on RAM, and not have the kick ass support behind it. Corsair is selling the 2800MHz kit for $539.99, while the 2666MHz kit is slightly cheaper at $479.99.

We've already seen ADATA unveil its DDR4 kits, but they're only sitting at 2133MHz, and what fun is that? The company has now just unveiled its new enthusiast-focused DDR4 kits, named the XPG Z1 DDR4. These new kits are kicking up some speeds, and even though they don't match some of the insane speeds of DDR3, they're still faster than the original kits, at 2800MHz.

ADATA will maek its new XPG Z1 DDR4 kits available as 4GB and 8GB modules, with 1.2V of power required in both dual- and quad-channel kits. The new kits are rated to run at 2133MHz at CL 15 15-15, or CL 13 13-13 timings. Cranking it up to 2400MHz, we have CL 16 16-16, and then we have the 2800MHz setting which sees the timings relaxed more to CL17 17-17.

The new kits are based on an advanced 10-layer printed-circuit boards with 2oz copper, meaning they're designed for some serious overclocking. The new ADATA XPG Z1 DDR4 kits sport a new cooling system, which features a very nice looking jet wing-inspired design with carbon texture that is used on race cars, which gives off the impression of serious performance. ADATA will make its new XPG Z1 DDR4 kits available to consumers next month, with a lifetime warranty.

Micron is planning for the near-future by preparing a 'Hybrid Memory Cube' that will provide 15 times more bandwidth compared to traditional DDR3 memory sticks that you get today. Even with the newer DDR4 implementation, like the one in Japan retail shelves, the HMC is still going to provide fives times more bandwidth.

Along with the bandwidth boost, the new memory type will also draw 70 percent lesser energy. Micron plans to achieve this by stacking memory as stacked chips using a connection type called 'Through Silicon Via'. That said, the memory will be required to be soldered on the motherboard near the CPU.

HMC will also have other features that are not present in DIMM-type DDR implementations. These include debug, more error correction features and also have logic layers.

Intel is poised to launch its X99-based chipset in September, where we should see the launch of the 16-threaded processor from the company - the Core i7-5960X. Well, DDR4 is what will be getting slotted into the motherboards, something that has just hit Japan retail shelves.

The DDR4 RAM is being sold in 16GB and 32GB modules, which are priced at $350 and $685, respectively. Expensive, but you could actually build a system with 128GB of RAM, which is a great thing for high-perfomance and enthusiast users. Intel should better introduce us to both DDR4 and its X99 chipset at the upcoming IDF event, so continue checking back until then.

Computex 2014 - Looking at the G.Skill booth we got a chance to see the new RAM cooler that G.Skill had recently introduced. While that was indeed what got our attention at first; what sat under the cooler was what really made us excited.

G.Skill are no slouch when it comes to RAM speed and looking above you can see the company has got the 16GB kit which consists of four 4GB modules running at an amazing 3501MHz DDR3 with a 14-31-31-45-2T setup on the mATX ASUS MAXIMUS VII GENE using an Intel Core i7 4770K CPU.

Showing that the speed isn't just limited to one motherboard; we see the same kit running the same timings on the ASRock Z97 OC Formula next to it. The biggest issue with memory like this, though, isn't having a motherboard that can support these speeds; but having a CPU with a memory controller that can.

Computex 2014 - Hanging around the G.Skill both we got a chance to look at some samples of the companies upcoming DDR4 modules which will be launched later this year alongside Intels next generation X99 chipset. While looking a little bare at the moment we don't doubt that the memory will join the likes of the TridentX series when released.

While information on most things surrounding the next generation Intel Chipset continues to be quite limited. You can see we've got kits ranging from 2133MHz DDR to 2666MHz DDR in sizes of 4GB and 8GB.

Companies continue to tell us that it's hard to know just how DDR4 performance goes as getting all the pieces for an X99 based system are difficult with Intel holding everything quite close to their chest. There's no denying that the coming months will see more and more leaks regarding the chipset will come to fruition. We can't deny, though, that X99 chatter is quitter then expected as companies continue to not say too much.

New DDR4 memory might not be available for a while yet, but the first samples of DDR4 memory have made it to the TweakTown Enterprise test lab today, fresh from the fabrication labs.

In addition to server's, new DDR4 memory will make its way into gaming systems, ultra books, laptops, desktops and workstations.

The sticks we received are 16GB, 288-pin RDIMM's with a speed of 2133MT/s and run at 1.2V with a CAS Latency rated at CL15.

This morning Crucial Memory announced that it has begun shipping samples of its new DDR4 modules to its partners through its new Technology Enablement Program. This program is aimed at channel partners who are actively developing and evaluating DDR4 platforms. Crucial says that this mornings announcement is the result of Micron's recent ramp-up in DDR4 module production.

"Memory is one of the biggest limitations when it comes to enterprise server environments. Many memory-dependent server applications are crucial to the day-to-day operations of a business, but they require higher densities of memory and increased performance," said Michael Moreland, worldwide product marketing manager, Crucial. "Crucial DDR4 memory enables servers to perform faster and run more efficiently than ever before, reducing power and cooling expenses along the way - essential for meeting the ever-increasing workload demands of data centers."

Micron Technology may hike its prices of DRAM chips by May as their inventory levels are running low and the supply of DRAM from other manufacturers Samsung Electronics and SK Hynix is also insufficient.

Few memory device makers have also reported that Micron has already raised its quotes to reflect the short supplies of DRAM chips. What also makes it worse that other DRAM manufacturing leaders are having issues of their own.

Samsung is affected by low production output of DRAM chips because of its migration towards 25nm process. Because of this, the South Korean based company is having tough times to meet with PC OEM contract orders. Samsung said that it is expecting a more balanced DRAM supply and demand by 2014, along with strong consumer and enterprise SSD demand to accelerate the process.

DDR4 RAM is still in its infancy and at the moment it's use is relegated to the high-end enterprise server world, but that has not stopped silicon manufacturer, SK Hynix, from pushing the new standard to the next level. Today the company unveiled its latest DDR4 module that boast an impressive 128GB of RAM on a single DIMM sized stick.

"The development of the world's first 128GB DDR4 module has its significance in opening ultrahigh density server market" said Sung Joo Hong, the head of DRAM development at SK Hynix in s statement.. "The company will further strengthen its competitiveness in premium DRAM sphere with the development of high density, ultrahigh speed and low power consuming products."

The 128GB stick of DDR4 is based on Through Silicon Via technology and utilizes SK Hynix's 20nm 8GB chips packed in a single DIMM module as tightly as possible. SK Hynix says that the stick of DDR4 is capable of speeds up to 2133Mbp/s, with speeds reaching 17GB/s if passed through a 64-bit wide bus. The sticks operate on just 1.2V which is a significant energy savings over the common 1.5V DDR3 modules.

Just moments ago Samsung announced the companies has increased DDR4 production. This comes on the just before of Intel's E5-2600 V3 series announcement that we expect soon.

Upon launch, DDR4 will increase DRAM performance while at the same time lower power consumption.

Here we see the evolution of DRAM over time with both throughput and power.

Today Micron Storage announced that it is beginning to ramp up production of DDR4 memory modules in preparation of Intel's pending launch of the new Xeon E5-2600 V3 line of processors. Micron says that these DDR4 modules will offer a performance increase of up to 35-percent over previously utilized DDR3 RAM.

"Our JEDEC-compliant portfolio showcases the performance and power benefits that DDR4 products can provide for our customers," said Robert Feurle, Micron's vice president of marketing and program management. "As a result of Micron's close engagement with our key enabling partners, we are well positioned to bring this exciting new technology to market."

"We have been working with Micron since the early days of DDR4 memory definition and through DDR4 product launch," said Geof Findley, Intel DCG Memory Ecosystem Director. "We are very excited that our mutual customers will be able to reap the benefits of this new memory technology to improve performance and reduce power as part of future Intel(R) Xeon(TM) processor E5-2600 v3 product family based systems with production availability of these new processors in 2H'14."

If you spend a lot of time on your computer with a lot of tabs or programs open that consume memory, you know you can never have enough RAM. If you use a new round Mac Pro that debuted last year and are in need of a RAM update, a new product has launched you will want to check out.

A company called Transcend has rolled out some new RAM upgrades for the 2013 Mac Pro that can bring the total amount of memory in the machine to 128GB. RAM modules are available in 16GB and 32GB capacity. Apple puts four upgradable RAM slots inside the machine.

Transcend says that while the Mac Pro is advertised to support only 64GB of RAM, it has tested the machine to work with up to 128GB. The 16GB modules are DDR3-1866 units with the 32GB modules being DDR3-1333. Both RAM configurations are RDIMMS and are guaranteed 100% to work with the Mac Pro. Pricing is unannounced at this time.

Samsung Electronics made an announcement today that it has started the mass production of 20 nanometer based DDR3 memory modules. The company is using the immersion ArF lithography to roll out 20nm based 4Gb for its most advance DDR3 memory.

Young-Hyun Jun, the executive VP of memory sales and marketing for Samsung Electronics said,"Samsung's new energy-efficient 20-nanometer DDR3 DRAM will rapidly expand its market base throughout the IT industry including the PC and mobile markets, quickly moving to mainstream status. Samsung will continue to deliver next-generation DRAM and green memory solutions ahead of the competition, while contributing to the growth of the global IT market in close cooperation with our major customers."

Samsung said that it refined its design and manufacturing by using modified double patterning and atomic layer deposition. Because of this, Samsung was able to improve the scaling of its NAND flash memory. According to the manufacturing giant, this technology marks a new milestone as it allows 20nm DRR3 memory production using these equipments. It also helped them to establish a core technology required for next generation 10nm DRAM production.

A federal court in California has concluded a case against 12 DRAM manufacturers as they accused of price fixing between 1998 and 2002. The court calculated that the manufacturers will have to do a settlement that totals up to $310 million.

The case was filed by a group of US attorney generals against DRAM manufacturers including Samsung, NEC, Infineon, Hynix, Micron and Toshiba in 2007. The DRAM makers have any wrongdoing of any price fixing during those years, but have agreed to make a settlement. The attorney generals have agreed to $310 million settlement package where the money will be distributed to the public.

Earlier, Samsung had to cough out $300 million in 2005 as a settlement with US department of Justice.

Team Group, Inc. collaborated with HKEPC Laboratory for the 23rd time to make a Super Pi 1M record using TeamGroup ProjectX memory kits.

The team was able to set a new world record of 5.078 seconds for Super PI 1M scores, therefore beating the previous record of 5.094 seconds by Russia's Smoke Core. What made this very impressive is that the previous record was held for 7 months, therefore one can imagine the time, effort, co-ordination and patience it would require to get everything right to break an already impressive world record.

The overclockers used Xtreem Series' DDR3-2000 2x 2GB CL8 memory kits that used Elpida ICs. It was paired with an i7- 3770K clocked at 7.13 GHz and ASROCK Z77 OC Formula motherboard. The ProjectX memory kit was clocked with 11-7-14 timings 1T at 1,359 MHz. Both components were cooled down by LN2.

Now that mini-PCs from companies such as ASROCK, ASUS and Zotac are catching up, SO-DIMM overclocking is something that would be interesting to see. G.SKILL did that using ASROCK M8 Barebone system.

G.SKILL managed to do just that, as they were able to overclock its ripjaws SO-DIMM 1.35V C11 2133 MHz to 2400 MHz 12-14-14-25 @ 1.35v.

ASROCK M8 is a barebone PC made for 4th Gen Intel series processors and uses Intel Z87 chipset. The system allows installation a single dual-slot video card with maximum dimension support of up to 290mm x 137mm x 43.5mm with up to TDP support of 200w. The unit also has 802.11 ac+ Bluetooth v4.0 support. M8 barebone system only includes a chassis, a 450w power supply, mini-ITX motherboard, fans and an optical disk drive. The rest of the components such as processors, memory kits and storage drive needs to purchased separately.

Samsung Electronics has started increasing its 25nm DRAM production with the hopes that it can grab a good share of the DRAM market while they still can. The South Korean based chipmaker is taking advantage of the situation courtesy of an accident that broke out at SK Hynix's DRAM production fab in China in September 2013.

Because of the fire that broke out in its plant, one third of the DRAM's production halted. Samsung Electronics and Micron Technology are the only DRAM chipmakers who are close enough to compensate for the production scarcity, including the production of chips for Apple Technology and GDDR5 for video cards.

Samsung Electronics has an advantage since they already have a 25nm DRAM production fab. The majority of DRAM production from Micron is based on 30nm process, and its technology transition to 20nm production won't be completed until the end of 2014. It was only recently when Micron completed its transition to manufacture 25nm chips via its plant in Hiroshima. This fab was formerly owned by Elpida Memory and produced DRAM chips for mobiles.