SK Hynix is preparing to begin mass production of LPDDR6 memory in the second half of 2026, according to South Korean outlet Herald. Xiaomi is expected to become the first customer, with the new memory reportedly destined for the company's next-generation flagship smartphone.
LPDDR6 is built on SK Hynix's sixth-generation 10nm-class process, known as 1c. The company is targeting a maximum data transfer speed of 14.4 Gbps, a 33% improvement over the 10.7 Gbps ceiling of LPDDR5X. Power efficiency improves by more than 20%, achieved through two key design changes.

The first is a sub-channel structure that allows individual memory channels to operate selectively, engaging only the data paths that are actually needed at any given moment. The second is Dynamic Voltage and Frequency Scaling, which adjusts voltage and frequency dynamically depending on the workload rather than running at a fixed level.
LPDDR memory is also expanding into AI servers through the SOCAMM module format, which delivers significantly lower power consumption than DDR5 while offering competitive bandwidth in compact server designs. JEDEC is targeting 512GB LPDDR6 SOCAMM modules for AI data centres, and AMD has already confirmed its Zen 7 EPYC processors will support next-generation LPDDR memory. That means LPDDR6 SOCAMM needs to reach volume production by 2028.


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Samsung announced its own LPDDR6 based on its 1b process in January, meaning both companies are now racing to commercialise the standard ahead of Micron. Meanwhile, China's CXMT is still working toward DDR6 production and is not expected to close the gap for several years. That gives SK Hynix an opportunity to lock in major Chinese smartphone customers such as Xiaomi, with Oppo and Vivo reportedly next in line.






