Update: SK hynix reached out to tech media to clear the air about its HBM3 detailing at ISSCC 2022, and that its HBM3 @ 896GB/sec is the same memory as the one the company unveiled back in October 2021 but with a different "standard of performance indication".
SK hynix will be detailing its latest under-development HBM3 memory spec at the ISSCC 2022 (IEEE International Solid-State Circuits Conference) with up to 24GB through 12-layer HBM3 DRAM. With capacities of up to 196Gb (24GB) the company is using TSV (through silicon via) auto-calibration and machine learning optimizations.
We know what to expect from the title of the session SK hynix is involved in is dubbed "A 192-Gb 12-High 896GB/s HBM3 DRAM with a TSV Auto-Calibration Scheme and Machine-Learning-Based Layout Optimization". FYI: "TSV" is through silicon via, but we don't know if this is prototype memory or something that will enter mass production and see SK hynix printing it onto devices en masse.
- Read more: SK Hynix teases HBM3 with 12-Hi 24GB stack layout, 6400Mbps speeds
- Read more: SK hynix announces HBM3: only 1/3 as thick as a piece of A4 paper
- Read more: SK Hynix announces GDDR6, offers up to 14Gbps of bandwidth
- Read more: Samsung is now sampling faster GDDR6 @ 24Gbps, for next-gen GPUs
- Read more: Samsung teases next-gen GDDR7 memory: insane 32Gbps (GDDR6X = 21Gbps)
The original HBM3 spec from SK hynix was tapping out at 665GB/sec but then upgraded to 820GB/sec a few months later, and now we have another 10% more at up to 896GB/sec from the new SK hynix HBM3 memory.
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