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Samsung launches the SZ985 800GB Z-SSD

10 times higher cell read than 3-bit V-NAND chips, random write speed of up to 170K IOPS and 16 microsecond write latency
By: Shaun Grimley | Storage News | Posted: Jan 31, 2018 8:30 pm

Samsung have today launched their new 800GB SZ985 Z-SSD, this Z-SSD is designed for advanced enterprise applications that include supercomputing for AI analysis, IoT and other big data applications. Samsung's latest Z-SSD is able to deliver exceptional performance, reliability and ultra-low latency that state-of-the-art AI applications demand.

 

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"With our leading-edge 800GB Z-SSD, we expect to contribute significantly to market introductions of next-generation supercomputing systems in the near future, enabling improved IT investment efficiency and exceptional performance," said Jinman Han, senior vice president, Memory Product Planning & Application Engineering at Samsung Electronics. "We will continue to develop next-generation Z-SSDs with higher density and greater product competitiveness, in order to lead the industry in accelerating growth of the premium SSD* market."

 

The new single port, four-lane Z-SSD features Z-NAND chips that provide 10 times higher cell read performance than 3-bit V-NAND chips, along with 1.5GB LPDDR4 DRAM and a high-performance controller. This impressive hardware is able to provide random write speeds of up to 170K IOPS, 1.7 times faster random read performance at 750K IOPS and five times less write latency at an incredible 16 microseconds when compared with an NVMe SSD PM963.

 

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Now that performance is covered, how about reliability? The SZ985 Z-SSD has a mean time between failures (MTBF) value of 2 million hours and a guarantee of up to 30 drive writes per day (DWPD) for five years, or a total of 42 petabytes.

 

Look out for the upcoming ISSCC 2018 (International Solid-State Circuits Conference), which will be held February 11-15 in San Francisco as Samsung plan to introduce both the 240GB and 800GB versions of the SZ985.

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