Here's an announcement that hardware fans have been looking forward to for some time. Samsung, one of the leaders in memory manufacturing, has announced today the development of a DDR4 DRAM stick that performs reads and writes with up to 40 percent more power efficiency than DDR3.
Samsung's DDR4 currently has a bandwidth max of 2.13Gbps at 1.2V, but these modules are expected to eventually be able to hit speeds of 4Gbps. This memory will be a godsend to mobile devices like laptops which will be able to use Samsung's Pseudo Open Drain technology to minimize battery drain by the modules. Samsung is also working with server manufacturers to acquire the JEDEC certification necessary for server implementation.
