SK hynix ramps 1c DRAM to 6 EUV layers, preps for High-NA EUV designs to destroy Samsung in HBM

SK hynix is reportedly using the EUV process in the development of its next-gen DRAM, with its 1c DRAM (6th-generation 10nm-class) for which transitional investment will begin later this year according to new reports.

In a new report from ZDnet Korea, the outlet reports from industry sources that SK hynix plans to use 5 or more EUV layers on its new 1c DRAM. SK hynix first applied EUV to one layer of its 1c DRAM (4th-generation 10nm-class) which was later expanded to four layers for its 1b DRAM.

In the future, 1c DRAM will increase the number of EUV layers to five or more, with SK hynix the first to develop 16Gb (gigabit) DDR5 DRAM based on the new 1c DRAM process, with plans to convert investments into 1c DRAM in the second half of this year.

SK hynix TL Park Eui-sang said at the 'Next Generation Lithography + Patterning Academic Conference' held at the Suwon Convention Center: "We will apply more than 5 EUV layers to 1c DRAM and use EUV for all next-generation products such as 1d and 0a. In line with this, SK Hynix is focusing on developing ways to increase the productivity of the EUV process".

SK hynix is also actively responding to the upcoming High-NA (high numerical aperture) EUV technology, with NA being a measurement of lens aberration, and higher NA values lead to improved resolution. Conventional EUV systems have a lens aberration of 0.33, with High-NA EUV systems having a higher NA of 0.55, with SK hynix planning to introduce High-NA EUV equipment as early as 2026.