SK hynix shows off HBM3E 12-Hi chips: 12 chips stacked, 40% thinner than 8-Hi stacks for 2025

SK hynix showed off its new HBM3E 12-Hi memory alongside NVIDIA products at the OCP Global Summit last week, with a range of AI memory semiconductor tech and products teased, with SK hynix aiming at leading the future semiconductor market.

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During the event, SK hynix showed off some of its AI memory products, including its new HBM3E 12-Hi stack memory which it started mass-producing in September, marking a significant milestone in the evolution of High Bandwidth Memory.

SK hynix's new HBM3E 12-Hi stack was showed off with NVIDIA's new H200 AI GPU and GB200 Grace Blackwell Superchip, with a huge 36GB capacity achieved by making the DRAM chips 40% thinner. This innovation has paved the way for a 12-stack HBM3E memory configuration at the same thickness as the previous HBM3E 8-Hi stack.

Not only that, but the beefed-up HBM3E 12-Hi stack data processing speed has been increased to 9.6Gbps, with SK hynix applying its core technology -- the advanced MR-MUF process -- to further improve heat dissipation by 10%, with Business Korea noting it earns SK hynix's new HBM3E 12-Hi stack memory the title of the world's best in speed, capacity, and stability.