The annual FMS: the Future of Memory and Storage 2026 event took place in Santa Clara, California, this week, where the biggest names in storage, enterprise, and AI gathered to showcase and discuss the latest advances across both memory and storage. And with some of the biggest names showcasing their next-gen technology for the first time, some of the more notable award winners this year include KIOXIA, Micron, and Samsung.

This year, KIOXIA unveiled its new GP1 Series PCIe 6.0 SSD series, purpose-built for advanced AI infrastructure. As the first super-high IOPS PCIe SSD optimized for expanding GPU memory, powered by KIOXIA XL-FLASH generation 2 low-latency flash memory, the GP1 Series impressively delivers up to 10 million random read IOPS. And with that, it more than earned its FMS: the Future of Memory and Storage 'Best of Show' award in the 'Specialized Storage' category.
When it comes to the FMS 2026 Grand Prize, that was awarded to Micron and its new 6600 ION NVMe SSD, which delivers high-capacity storage up to 245TB of usable capacity for AI and cloud infrastructure. Built with 4‑bit‑per‑cell (QLC) technology and Micron G9 QLC NAND, it offers massive storage in a compact form factor with PCIe Gen5 performance. Micron notes that the small form factor allows companies to scale in a way that hasn't been seen before.


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What are the stated random read IOPS and key performance targets of KIOXIA's GP1 Series PCIe 6.0 SSD mentioned in the article?
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On the memory side, Samsung's V10 BV-NAND and LPDDR5X-PIM memory earned a Best of Show award in the Next-Gen Memory category. V10 BV-NAND is all about cloud and AI memory, with over 400 layers. LPDDR5X-PIM, on the other hand, is built for edge computing with processing-in-memory (PIM) technology that can actually perform AI computations directly within memory.







