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Samsung becomes the first company to ship HBM4E memory samples, just three months after leading the HBM4 generation

Samsung's HBM4E reaches up to 16 Gbps with 3.6 TB/s of bandwidth per stack, more than 20% faster than HBM4 and 16% more energy efficient.

Samsung becomes the first company to ship HBM4E memory samples, just three months after leading the HBM4 generation
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TL;DR: Samsung has started shipping samples of its HBM4E high-bandwidth memory, offering up to 16 Gbps speed, 48GB capacity, and 3.6 TB/s bandwidth per stack. It improves energy efficiency by 16% and thermal resistance by 14% over HBM4, targeting AI data center applications with mass production aligned to customer schedules.
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Samsung has begun shipping samples of its HBM4E high-bandwidth memory to major global customers, making it the first company to deliver the next-generation AI memory product. The announcement sent Samsung shares surging as much as 6.51% before settling at a 3.67% gain, closing at 310,500 won.

The new 12-layer HBM4E delivers a stable pin speed of 14 Gbps, with performance that scales up to 16 Gbps, representing more than a 20% increase over HBM4. Memory bandwidth reaches up to 3.6 TB/s per stack, which, for context, is roughly equivalent to the combined memory bandwidth of two GeForce RTX 5090 GPUs in a single stack. The 12-layer configuration ships with a 48GB capacity, a more than 30% increase over the previous generation, with 32GB eight-layer and 64GB sixteen-layer variants also in the works, depending on customer requirements.

Samsung becomes the first company to ship HBM4E memory samples, just three months after leading the HBM4 generation 2

Beyond raw speed and capacity, Samsung has also made meaningful efficiency gains. Advanced low-power design techniques and an optimized packaging architecture improve energy efficiency by 16% and reduce thermal resistance by more than 14% compared to HBM4, translating into better heat dissipation and longer-term reliability in demanding data center environments.

The chip is built on Samsung's sixth-generation 10nm-class 1c DRAM process with a 4nm logic base die from Samsung Foundry. Samsung says it will align HBM4E mass production with individual customers' schedules following sample evaluation, which almost certainly includes NVIDIA for solutions such as its upcoming Vera Rubin AI superchip.

"Following the successful mass production of HBM4, Samsung has once again demonstrated its distinct technological edge with HBM4E," said Sang Joon Hwang, Executive Vice President and Head of Memory Development at Samsung Electronics. "Through our advanced manufacturing capabilities and preemptive infrastructure investments, we will continue to drive the growth of the global AI memory market."

Samsung becomes the first company to ship HBM4E memory samples, just three months after leading the HBM4 generation 1

The HBM4E shipment comes roughly three months after Samsung began distributing HBM4 in February, where it became the first company to initiate mass shipments of that generation. SK Hynix had initially planned HBM4E sample shipments for the second half of this year, but has reportedly moved up its timeline due to smoother-than-expected development. Micron, meanwhile, is targeting a mass-production ramp-up for HBM4E in 2027.

With customers already booking capacity through 2027 and AI infrastructure demand showing no signs of slowing, Samsung's push to lead the HBM4E generation is a strategic bet to gain ground in next-generation AI memory.

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News Source:news.samsung.com

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Hassam is a veteran tech journalist and editor with over eight years of experience embedded in the consumer electronics industry. His obsession with hardware began with childhood experiments involving semiconductors, a curiosity that evolved into a career dedicated to deconstructing the complex silicon that powers our world. From benchmarking PC internals to stress-testing flagship CPUs and GPUs, Hassam specializes in translating high-level engineering into deep, unbiased insights for the enthusiast community.

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