KIOXIA samples next-gen 512Gb TLC BiCS FLASH storage solutions

KIOXIA has announced a milestone in the development of its 9th Gen BiCS FLASH 3D flash memory technology, with mass production set to commence in fiscal year 2025. This is the successor to the 8th Gen BiCS FLASH technology that we wrote about last week, which is featured in the company's impressive 245.76 TB NVMe SSD, designed for the enterprise data center market.

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9th Gen BiCS FLASH 3D flash memory technology is all about delivering "high performance at reduced production cost," thanks to CBA (CMOS directly Bonded to Array) technology that brings performance, efficiency, and density. And on that note, KIOXIA has announced that it has begun shipping samples of 512Gb Triple-Level Cell (TLC) memory devices featuring 9th Gen BiCS FLASH technology.

KIOXIA notes that these devices are built for applications that demand high-performance and "exceptional power efficiency," with low to mid-level storage capacity requirements. KIOXIA added that these devices will also be integrated into future enterprise SSDs from the company, targeting the AI market and those looking to boost GPU efficiency.

KIOXIA notes that 512Gb TLC, with 120-layer stacking and an 8% increase in bit density, offers significant performance gains over its existing products with the same capacity. Up to 61% faster write performance, 12% faster read performance, and power efficiency gains in the realm of 30%. The company also confirms 3.6 GB/s NAND interface performance, with 4.8 GB/s achievable "under demonstration conditions."

Rounding out the announcement, KIOXIA also confirmed that 10th Gen BiCS FLASH technology devices are also coming; however, these will increase the number of memory layers "to meet the expected future demand for larger-capacity, high-performance solutions."