KIOXIA is now sampling UFS Ver. 4.1 devices with up to 45% faster performance

Universal Flash Storage (UFS) offers high-performance, low-power storage for mobile devices. With KIOXIA now sampling its new UFS Ver. 4.1 embedded memory devices to partners, it's set to usher in a new era for next-generation mobile applications and smartphones with powerful on-device AI.

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KIOXIA-powered UFS Ver. 4.1 devices incorporate the company's latest 8th generation BiCS FLASH 3D flash memory, which introduces CBA (CMOS directly Bonded to Array) technology to boost power efficiency, performance, and density. This is a triple win for mobile devices as it offers a performance increase of up to 45% when compared to the previous generation.

KIOXIA UFS Ver. 4.1 devices will also lead to faster downloads and smoother app performance, and will be available in capacities of 256 GB, 512 GB, and 1 TB. Here's a breakdown of the performance gains, covering read/write and power efficiency.

Looking at 512GB devices with UFS Ver. 4.1 flash memory, random read speeds are improved by up to 30% compared to the previous generation, while random write speeds are improved by up to 45%. And when it comes to power efficiency for read and write performance, you're looking at an improvement of 15-20% gen-on-gen.

KIOXIA is also introducing some new smart tech with UFS Ver. 4.1, Host Initiated Defragmentation ensures fast performance during critical times by delaying garbage collection, while WriteBooster allows buffer resizing to achieve optimal performance.

"By introducing UFS Ver. 4.1, KIOXIA continues to strengthen its commitment to leading flash storage innovation - delivering faster, smarter, and more secure experiences across next-generation devices," said Maitry Dholakia, vice president, Memory Business Unit, for KIOXIA America, Inc. "This latest offering reflects our ongoing dedication to developing advanced memory solutions that meet the performance and efficiency demands of tomorrow's mobile and computing platforms."