Fujitsu Develops New NOR Flash Memory Macro
Fujitsu Microelectronics Limited today announced the development of new flash memory macro that enables NOR flash memory circuits to achieve high-speed read operations while operating at low power currents. The new flash memory macro is guaranteed to retain program data storage for 20 years, or 100,000 write/erase cycles for data storage, while improving access speeds by 2.5 times to 10 nanoseconds (10 ns), and reducing the required operating current per cell by two-thirds to 9 microamperes (9 µA), compared to Fujitsu's past technologies. This technology will be implemented in microcontrollers featuring embedded flash memory in automotive, industrial, and consumer electronics applications for which high speed, low current, and high reliability are all priorities, thus contributing to a reduction in the burden on the environment.
Fujitsu has an established track record producing high-reliability microcontrollers featuring embedded NOR flash memory. However, with rising demand for microcontrollers that achieve even higher speeds while consuming less power, it becomes imperative to develop a new flash memory macro to accommodate these needs. Burst mode is one method of accelerating operation speeds of flash memory macros, but depending on characteristics of the CPU core, this can result in undesirable wait states while data is being processed, thereby lowering the overall performance of the microcontroller.
Overview of the new flash memory macro
The new flash memory macro uses circuit elements from Fujitsu's proprietary high-speed memory-access technology FCRAM (fast-cycle random-access memory) in its NOR flash memory circuit, resulting in high speed, low operating current, and high reliability.
By utilizing - as a key feature of FCRAM - an optimized cell array that reduces load during drive operation, and through innovations in power-supply management technology, the new flash memory macro can accelerate data-read methods. These innovations improve access speeds by 2.5 times to 10 ns, while cutting operating current for each cell by two-thirds to 9 µA, compared to Fujitsu's past technologies (Figure 1, above). By utilizing microcontrollers embedded with this technology, it becomes possible to enhance the performance of battery-operated portable audio-visual devices and to extend battery life.
The new flash memory macro will be used as a core technology for ecological technologies (Figure 2). By offering flash memory microcontrollers embedded with these ecological technologies, Fujitsu will be able to provide high reliability, high temperature tolerance and high-speed technologies that are particularly essential for automotive applications. The inclusion of these environmentally-friendly technologies in microcontrollers with embedded flash memory will contribute to a reduction in the environmental burden footprints of embedded systems.
Latest News Posts
- Dynasty Warriors 9 dev apologizes for major PC patch delay
- Assassin's Creed Origins New Game+ beaten, reward revealed
- Overwatch League Streams on Twitch can earn in-game rewards
- Far Cry 5 detail the dog Boomer, mans best friend
- Kingdom Come: Deliverance sells 1 million copies in 1 month
- Ryzen (1000-Series) Overclocking Guide
- For Sale (40 Pieces) Apple iPhone X 64GB $17,960 Brand New Unlocked
- Apple iPhone X $999 Buy here www.BizFests.com
- Corsair Obsidian 500D Premium Mid-Tower Chassis Review
- Seagate IronWolf 12TB HDD Review
- Micron Launches Industry's First Enterprise SATA Solid State Drives Built on Leading 64-layer 3D NAND Technology
- Micron, Rambus, Northwest Logic and Avery Design to Deliver a Comprehensive GDDR6 Solution for Next-Generation Applications
- Toshiba Memory America Unveils UFS Devices Utilizing 64-Layer, 3D Flash Memory
- ASUS Announces GeForce GTX 1070 Ti Series Gaming Graphics Cards
- ASUS Announces ASUS Hangouts Meet Hardware Kit