Samsung and Toshiba to Support New Standardized NAND Specification
Samsung and Toshiba to Support New Standardized NAND Specification
Samsung Electronics Co., Ltd. and Toshiba Corporation today announced their commitment to development of the most advanced high-performance NAND flash memory technology available today - a double data rate (DDR) NAND flash memory with a 400 megabit-per-second (Mbps) interface, toggle DDR 2.0 specification. The high-performance NAND memory is expected to be of immediate benefit to a host of NAND-based mobile and consumer electronics applications, especially where there is consumer demand for an extra stretch in performance. Both companies will support a standard industry specification to enable broad-scale acceptance of this new high-speed technology.
"Our introduction of high-speed 30 nanometer class* NAND late last year served as an initial pathway for stimulating acceptance of the new high-performance toggle DDR technology," said Dong-Soo Jun, executive vice president, memory marketing, Samsung Electronics. "Now, continual upgrades in high-speed performance will create new applications and broader market opportunities for NAND flash memory. The rapid adoption of fourth generation (4G) smartphones, tablet PCs and solid state drives is expected to drive demand for a broader range of high-performance NAND solutions."
"Toggle DDR provides a faster interface than conventional NAND using an asynchronous design, delivering the benefits of high-speed data transfer to a wider market, such as for solid state drive (SSD) applications including enterprise storage, mobile phones, multimedia terminals and consumer products," said Masaki Momodomi, Technical Executive, Memory product, Toshiba Corporation. "And we will continue to make the best effort possible to create standard, high-speed NAND Flash interface solutions with NAND vendors and customers, which will accelerate the revolution in storage applications."
The current toggle DDR 1.0 specification applies a DDR interface to conventional single data rate (SDR) NAND architecture. The resulting NAND chip has a 133 Mbps interface.
Samsung and Toshiba will focus on assuring a 400 Mbps interface for the toggle DDR 2.0 specification, which provides a three-fold increase over toggle DDR 1.0, and a ten-fold increase over 40 Mbps SDR NAND in widespread use today.
Both companies support industry-wide adoption of the high-speed specification, which would facilitate faster acceptance of toggle DDR memory with hardware engineers and application designers. Last month, each company started participating in standardization efforts for the new technology through the JEDEC Solid State Technology Association.
Related Tags
Latest News Posts
- Far Cry 5 tops game sales for March 2018
- Wolfenstein II: The New Colossus comes to Switch, June 29
- LG's new G7 ThinQ brings the stupid notch from iPhone X
- H1Z1 is locked at 60FPS on the PS4 Pro
- Ohio university gives scholarships to best Fortnite players
Forum Activity
- EVGA DG-77 Mid-Tower Chassis Review
- Samsung 970 EVO 1TB M.2 NVMe PCIe SSD Review
- B360M-ITX/ac does not see USB drive at all
- WD My Passport Wireless SSD 500GB Review
- Legacy Mode
Press Releases
- Micron Launches Industry's First Enterprise SATA Solid State Drives Built on Leading 64-layer 3D NAND Technology
- Micron, Rambus, Northwest Logic and Avery Design to Deliver a Comprehensive GDDR6 Solution for Next-Generation Applications
- Toshiba Memory America Unveils UFS Devices Utilizing 64-Layer, 3D Flash Memory
- ASUS Announces GeForce GTX 1070 Ti Series Gaming Graphics Cards
- ASUS Announces ASUS Hangouts Meet Hardware Kit