Toshiba reveals memory breakthrough with TSV 3D NAND

Toshiba uses TSV to unlock more power efficiency and higher speeds in its TLC BiCS flash 3D NAND memory.

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On the back of its major QLC 3D NAND flash breakthrough, Toshiba today announced yet another milestone with the world's first 3D NAND flash memory powered by TSV technology.

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Toshiba will leverage TSV (Through Silicon Via) technology to further boost data transfers and lower power consumption of its 3D BiCS VNAND TLC flash memory line. TSV's highly efficient vertical-based technology aligns with the stacked flash memory dies of Toshiba's BiCS flash line. In fact, the Japanese storage titan assets that TSV allows up to 200% more power efficiency of BiCS flash memory outfitted with traditional wire-bonding architecture.

The Tokyo-based company notes that TSV BiCS flash will enabled 1TB storage devices with 16-die stacked architecture in a single package.

"Toshiba Memory Corporation will commercialize BiCS FLASH with TSV technology to provide an ideal solution in respect for storage applications requiring low latency, high bandwidth and high IOPS/Watt, including high-end enterprise SSDs," the company said in a recent press release.

Toshiba will showcase prototypes of its latest TSV-enabled devices at this year's Flash Memory Summit starting on August 7 in Santa Clara, California.

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Derek joined the TweakTown team in 2015 and has since reviewed and played 1000s of hours of new games. Derek is absorbed with the intersection of technology and gaming, and is always looking forward to new advancements. With over six years in games journalism under his belt, Derek aims to further engage the gaming sector while taking a peek under the tech that powers it. He hopes to one day explore the stars in No Man's Sky with the magic of VR.

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