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Toshiba reveals memory breakthrough with TSV 3D NAND

Toshiba uses TSV to unlock more power efficiency and higher speeds in its TLC BiCS flash 3D NAND memory

By Derek Strickland from Jul 11, 2017 @ 9:18 CDT

On the back of its major QLC 3D NAND flash breakthrough, Toshiba today announced yet another milestone with the world's first 3D NAND flash memory powered by TSV technology.


Toshiba will leverage TSV (Through Silicon Via) technology to further boost data transfers and lower power consumption of its 3D BiCS VNAND TLC flash memory line. TSV's highly efficient vertical-based technology aligns with the stacked flash memory dies of Toshiba's BiCS flash line. In fact, the Japanese storage titan assets that TSV allows up to 200% more power efficiency of BiCS flash memory outfitted with traditional wire-bonding architecture.

The Tokyo-based company notes that TSV BiCS flash will enabled 1TB storage devices with 16-die stacked architecture in a single package.

"Toshiba Memory Corporation will commercialize BiCS FLASH with TSV technology to provide an ideal solution in respect for storage applications requiring low latency, high bandwidth and high IOPS/Watt, including high-end enterprise SSDs," the company said in a recent press release.

Toshiba will showcase prototypes of its latest TSV-enabled devices at this year's Flash Memory Summit starting on August 7 in Santa Clara, California.


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