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Toshiba reveals memory breakthrough with TSV 3D NAND

Toshiba uses TSV to unlock more power efficiency and higher speeds in its TLC BiCS flash 3D NAND memory
By: Derek Strickland | Storage News | Posted: Jul 11, 2017 2:18 pm

On the back of its major QLC 3D NAND flash breakthrough, Toshiba today announced yet another milestone with the world's first 3D NAND flash memory powered by TSV technology.

 

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Toshiba will leverage TSV (Through Silicon Via) technology to further boost data transfers and lower power consumption of its 3D BiCS VNAND TLC flash memory line. TSV's highly efficient vertical-based technology aligns with the stacked flash memory dies of Toshiba's BiCS flash line. In fact, the Japanese storage titan assets that TSV allows up to 200% more power efficiency of BiCS flash memory outfitted with traditional wire-bonding architecture.

 

The Tokyo-based company notes that TSV BiCS flash will enabled 1TB storage devices with 16-die stacked architecture in a single package.

 

"Toshiba Memory Corporation will commercialize BiCS FLASH with TSV technology to provide an ideal solution in respect for storage applications requiring low latency, high bandwidth and high IOPS/Watt, including high-end enterprise SSDs," the company said in a recent press release.

 

Toshiba will showcase prototypes of its latest TSV-enabled devices at this year's Flash Memory Summit starting on August 7 in Santa Clara, California.

 

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