8K Random Write/Read
We precondition the drive for 16,000 seconds, or 4.44 hours, receiving performance data every second. We plot this data to observe the test subjects decent into steady state. We plot both IOPS and Latency. We plot IOPS (represented by blue scatter) in thousands and Latency (represented by orange scatter) in milliseconds. We observe steady state is achieved at 2,700 seconds of preconditioning.
Again, there is no contest; the M510DC delivers 8K random write performance in the same manner as it does 4K random write, only this time there is very little variability across all measured queue depths. The M510DC holds steady at between 12.2K - 12.3K average IOPS throughout the entire test. The 845DC EVO also displays very little variability, holding steady at 7.3K average IOPS at QD1-32.
Samsung's 845DC EVO outperforms the M510DC across the board when reading 8K random data. The largest separation between the two drives occurs at QD16, with the 845DC EVO averaging 54.3K IOPS and the M510DC averaging 43.2K IOPS. The 845DC EVO achieves maximum performance at QD16. The M510DC continues to deliver increasing performance from QD1-32.
Conclusion: In a pure 8K random workload environment, the M510DC delivers better write performance and the 845DC EVO delivers better read performance.
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- Page 1 [Introduction and Quick Specs]
- Page 2 [Micron M510DC 480GB Internals and Specifications]
- Page 3 [Test System and Methodology]
- Page 4 [Benchmarks - 4K Random Write/Read]
- Page 5 [Benchmarks - 8K Random Write/Read]
- Page 6 [Benchmarks - 128K Sequential Write/Read]
- Page 7 [Mixed Workload Benchmarks - Email Server]
- Page 8 [Mixed Workload Benchmarks - OLTP/Database]
- Page 9 [Mixed Workload Benchmarks - Web Server]
- Page 10 [Final Thoughts]