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OCZ Dual Channel PC3200 EL DDR SDRAM

By: Cameron Johnson | DDR-3 Memory in RAM | Posted: Mar 3, 2003 5:00 am
TweakTown Rating: 9.5%Manufacturer: OCZ Technology

Specifications and Features of the EL Dual Channel DDR SDRAM




5ns OCZ T-SOP Chips


Thin Copper Heat Spreader


Lifetime Warranty


6 Layer Ultra Low Noise (ULN) Shielded PCB


Available in up to 512MB Module




32x8 Low Density, Unbuffered


CAS 2 6-3-3 1T @ DDR400 PC3200


CAS 2 5-2-2 2T @ DDR333 PC2700


CAS 2 5-2-2 1T @ DDR266 PC2100









When we first reviewed the DDR-433 module we didn't get our module in the retail package. We were contacted by OCZ and Ramstore in Canada stating that they had packaged it in retail box. Customs was to blame for removing it from the case and placing it in a static bag. Today we are lucky enough to have our unit unmolested. With the Dual DDR package you get your memory in two separate containers bound with the OCZ seal of approval. Inside the packages you get your memory and installation guide with tips for overclocking your system and memory.


The Modules



Here we see the two modules removed from the packaging. The units are encased in a thin copper heatspreader. OCZ use copper for heatspreaders due to the advanced thermal properties inherent to copper. The spreaders are thinner than most, which reduces costs but keep the memory cool when running above spec.



The heatsink has been especially made by OCZ with OCZ Technology engraved into the heatspreader.



Under the copper heatspreader OCZ 5ns TSOP memory modules power the two modules. Both modules have identical chips and identical layouts for maximum compatibility in Dual Channel operation.



OCZ placed two stickers on this set - First your standard identification sticker that gives the speed rating and the OCZ Technology logo. The second sticker shows the module as the EL Dual Channel modules. EL stands for Enhanced Latency. This means that the chips have been specially selected for maximum speed. A 6 layer Ultra Low Noise (ULN) PCB is used to reduce the noise across the memory bus to increase the potential maximum speed.


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