Intel and ASML achieve 'First Light' milestone with new High-NA lithography tech

ASML and Intel have reached the "First Light" milestone using ASML's latest High-NA lithography system, turning on its light source and making the light reach resist on the wafer.

3

ASML's new Twinscan EXE:5000 High-NA EUV system delivered to Intel (source: Intel)

The report is coming from Reuters, with this being a critical first step in the very latest manufacturing technology from ASM; the "first light" milestone means that one of the critical components of ASML's new Twinscan EXE-5000 system is operational, but not at its peak performance.

Marc Assinck, a spokesman for ASML, explained: "Technically, this 'first light' actually is 'first light on the wafer.' The light source was already working, now we have the photons 'in resist' on the wafer".

• Read more: ASML ships industry's first High-NA EUV lithography scanner to Intel

ASML's exciting new Twinscan EXE High-NA EUV lithography machines feature projection optics with a 0.55 numerical aperture that can achieve a resolution of down to 8nm with a single exposure. Compared to a regular Low-NA EUV system that can do 13.5nm resolution with a single exposure.

The new Twinscan EXE:5000 High-NA EUV lithography machine is located at ASML's laboratory in Veldhoven, Netherlands, while a second machine is currently being assembled at an Intel facility near Hillsboro, Oregon.

3

• Read more: Intel unveils its new Intel 14A process node, ready for the future of AI chips
• Read more: TSMC: next-gen 1nm-class monolithic chips with 1 trillion transistors by 2030
• Read more: TSMC preparing for 1nm production, new cutting-edge facility in Taiwan
• Read more: Intel: 2026 when it wants to beat TSMC at making the world's fastest chips
• Read more: Intel targets 1 trillion transistors on a single package by 2030
• Read more: Intel CEO: we want 1 trillion transistors in a single package by 2030