Toshiba has announced that it has begun sampling its sure-to-be impressive 48-layer 128Gbit (16GB) 3D NAND part, which has the company involved in a NAND joint-venture with SanDisk called BiCS, or Bit Cost Scaling.
This is similar to Samsung's TCAT structure, but BiCS moves away from the "traditional floating gate design and utilizes a charge trap made out of insulating material to reduce electron leakage" reports AnandTech. Toshiba's 48-layer part is impressive, with the company starting the manufacturing of its 3D NAND in its Fab 5 found in its Yokkaichi Operations based in Japan.
We should see Fab 2, which is based in the same location, spin up and be running in the first half of 2016, which will increase the output of Toshiba's 3D NAND output. Samples begin shipping today, but consumer parts are at least a year away, where we should expect BiCS-based products from Toshiba to be made available in the first half of 2016.
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