The International Solid-State Circuits Conference (ISSCC) has just kicked off in San Francisco, where Samsung has just unveiled the world's first 10nm FinFET technology. Samsung Electronics Semiconductor Business chief, Kim Ki-nam teased the future for Samsung when he took the stage.
Ki-nam teased the company's 10nm DRAM technology, as well as a sneak peak at its 3D V NAND technology. Samsung expects that its technology will be used in countless devices going into the future, where Kim said Samsung is "expected to come in the future advent of IoT (Internet of Things) spread into a wide range of IT equipment, including the age of the data center (Data Driven World) 'and the silicon semiconductor technology it is possible to ensure the performance and low-power solution for the semiconductor chip that can process these data through the innovation".
We should hear more about Samsung's 10nm FinFET process as we move deeper into the year, as well as what devices and products will be powered by the 10nm technology. Exciting times!
- > NEXT STORY: Free Forza 2 game title features Fast & Furious cars, missions
- < PREVIOUS STORY: Unreal Engine updated with incredibly 'realistic foliage lighting'