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FMS 2014 - Chris Geiser from Samsung on 3-bit per cell V-NAND and more

FMS 2014 - Chris Geiser from Samsung on 3-bit per cell V-NAND and more

Chris Ramseyer | Aug 6, 2014 at 3:03 am CDT (0 mins, 42 secs time to read)

Flash Memory Summit 2014 - Chris Geiser, Senor Product Manager at Samsung sat down with TweakTown today to talk about the next iteration of V-NAND technology, 3-bit per cell V-NAND. Also known as TLC NAND, 3-bit per cell is a method used to increase the density of NAND flash memory by allowing the flash cell to use 8 charge states. V-NAND, also commonly referred to as 3D NAND, orders cells vertically rather than horizontally. Samsung's new 32nm 32-layer V-NAND should reduce the cost of V-NAND significantly while also ushering in higher capacity sizes.

Before the FMS 2014 show floors even open we're hearing a lot about 2TB capacity sizes coming before the end of the year. 3-bit per cell V-NAND could potentially get us there.

Chris Geiser also spoke with us about future interface technology such as NVMe.

FMS 2014 - Chris Geiser from Samsung on 3-bit per cell V-NAND and more | TweakTown.com

Last updated: Apr 7, 2020 at 11:47 am CDT

ABOUT THE AUTHOR - Chris Ramseyer

Chris Ramseyer started his career as a LAN Party organizer in Midwest USA. After working with several computer companies he was asked to join the team at The Adrenaline Vault by fellow Midwest LAN Party legend Sean Aikins. After a series of shake ups at AVault, Chris eventually took over as Editor-in-Chief before leaving to start Real World Entertainment. Look for Chris to bring his unique methods of testing Hard Disk Drives, Solid State Drives as well as RAID controller and NAS boxes to TweakTown as he looks to provide an accurate test bed to make your purchasing decisions easier.

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