TweakTown
Tech content trusted by users in North America and around the world
5,665 Reviews & Articles | 36,004 News Posts

Elpida Uses High-k Metal Gate Technology to Develop 2-gigabit DDR2 Mobile RAM

Elpida Memory, Inc., Japan's leading global supplier of Dynamic Random Access Memory (DRAM), today announced the DRAM industry's first-ever use of high-k metal gate (HKMG) technology to develop a 2-gigabit DDR2 Mobile RAM (LPDDR2) at the 40nm-class DRAM node.

 

TweakTown image pr/5/7/5739_03_elpida_uses_high_k_metal_gate_technology_to_develop_2_gigabit_ddr2_mobile_ram.jpg

 

HKMG is technology that uses insulator film with a high dielectric constant (abbreviated to "high-k," a semiconductor industry measure of how much charge a material can hold) in the transistor gate to reduce current leakage and improve transistor performance. Metal gate electrodes that are required for the high-k dielectrics process are also used. Some makers of logic semiconductors have started to use HKMG, but higher heat treatment temperatures after HKMG formation and complicated DRAM structural characteristics have prevented consistent application in the DRAM fabrication process. Elpida, however, has managed to lower the heat treatment load and overcome certain memory device structural complications.

 

In producing the new DDR2 Mobile RAM, HKMG technology is able to reduce the electrical thickness of the gate dielectric in the transistor by around 30% compared with a conventional silicon oxide dielectric. The technology also raises DRAM performance by increasing transistor-on current by as much as 1.7 times compared with a silicon oxide film. Transistor-off current can be lowered to less than 1/100th of existing levels, thereby drastically reducing energy consumed in standby mode of DDR2 Mobile RAM.

 

Elpida plans to apply HKMG technology to produce faster and more energy efficient Mobile RAM devices, the company's mainstay product area.

 

In addition, Elpida will continue to evaluate and improve HKMG in order to apply the technology at the 30nm and 25nm nodes. Sample shipments of products are planned for FY 2011, with volume production to follow.

 

Related Tags

Further Reading: Read and find more RAM press releases at our RAM PR index page.

Do you get our RSS feed? Get It!

Post a Comment about this press release

Latest Tech News Posts

View More News Posts

Latest Downloads

View More Latest Downloads

TweakTown Web Poll

Question: Did EA kill the Battlefield franchise with the terrible BF4 issues?

Yes, Battlefield is doomed

No, Battlefield will live on strong

I'm not sure, but I know EA needs to improve its game

or View the Results

View More Polls

Forum Activity

View More Forum Posts

Press Releases

View More Press Releases
Get TweakTown updates via Facebook!
Just click the "Like" button below