Intel Corporation (Nasdaq:INTC) and Micron Technology, Inc. today expanded their NAND Flash memory joint venture operations with the official opening of IM Flash Singapore. The US$3 billion facility is expected to employ about 1,200 and is currently ramping production of the companies' industry-leading 25 nanometer (nm) NAND Flash memory. The companies announced the opening of the state-of-the-art 300 millimeter facility at a ceremony with Singapore government representatives, including Prime Minister Lee Hsien Loong.
"In just five short years, Intel and Micron have successfully collaborated to become the industry's NAND Flash leader," said Steve Appleton, Micron Chairman and CEO. "The opening of IM Flash Singapore marks another significant milestone in our partnership and complements Micron's Singapore operations that serve as our company's Asian hub."
"The Intel-Micron partnership has been highly successful in developing innovative NAND Flash technology," said Dave Baglee, Intel Vice President and Director of NAND Manufacturing and Operations. "The IM Flash joint venture has been able to create tremendous momentum and industry leading manufacturing capabilities. We look forward to adding IM Flash Singapore to our global manufacturing network."
IM Flash has ramped production of 25nm NAND Flash memory at the Singapore facility since mid-2010. The facility is expected to be at full production levels later in 2011.
"IM Flash Singapore was able to start up very successfully with its first wafer out a month ahead of the schedule and with matching quality. This enabled an early shipment release to both Intel and Micron," said Chen Kok Sing, IM Flash Singapore Managing Director. "This success is a testament of the solid commitment and seamless execution of our team members. This is also possible only with the strong support from both parent companies and everyone in the IM Flash manufacturing network."
Along with the new Singapore facility, the joint venture produces products at two other joint venture manufacturing locations: Lehi, Utah, and Micron's Manassas, Va., facility. Intel and Micron also recently introduced 20nm NAND Flash memory process technology that will be implemented at the IM Flash facilities during the course of 2011.
Latest News Posts
- Microsoft 'couldn't focus' enough in order to make a portable Xbox
- Witcher 3 first person mod released, looking good
- Razer opens up the pre-order floodgates for its OSVR headset
- Samsung reportedly working on higher-end 'Odyssey' VR headset
- Pokemon GO developer asks gamers to stop requesting PokeStops and gyms
- G1.Sniper M3 Boot Loop
- GPU Ugrade killed my NIC
- Cooler Master MasterBox 5 Mid-Tower Chassis Review
- H110M-HDV bricked after internet flash
- Bad PSU, now bad motherboard?
- AccelStor debuting NeoSapphire 3706-ES1 at Flash Memory Summit 2016
- Elitegroup ceremoniously launches ECS H110S-2P mini-STX motherboard and the all-new LIVA Pro Mini PC
- MSI announces custom GeForce GTX 1060 graphics cards
- Seagate unveils the industry's broadest 10TB portfolio
- G.SKILL announces a major software update for the RIPJAWS KM780 RGB mechanical gaming keyboard