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Micron Introduces New Memory Device Supporting Intel Processor-Based Tablets, Netbook

Micron Introduces New Memory Device Supporting Intel Processor-Based Tablets, Netbook

 

Micron Technology, Inc., today announced a new 2-gigabit (Gb) 50-nanometer (nm) DDR2 memory device to support the upcoming Intel Atom platform for tablet and netbook personal computers, codenamed "Oak Trail." The small form factor, high-density and low-power consumption of the 2Gb 50nm DDR2 makes it an ideal memory solution for the tablet PC market where size and battery life are key features.

 

The transition of Micron's 2Gb DDR2 product to the more advanced 50nm process node demonstrates the company's continued commitment and ongoing investment in technologies that meet market demand. In addition to the increase in density from 1Gb to 2Gb-based components, the move to the 50nm process inherently provides improved power savings and a smaller memory footprint.

 

"Micron's 2Gb 50nm DDR2 device is the ideal memory companion for Intel's upcoming Intel(R) Atom(TM) processor-based 'Oak Trail' platform," said Robert Feurle, Micron's vice president of DRAM Marketing. "Given its low-power demands, maximum density and high performance, it is well-suited for the thriving tablet market. Additionally, Micron is committed to this 50nm product line and looks forward to providing ongoing support for customers' innovations around this technology."

 

"The upcoming Intel Atom 'Oak Trail' platform is optimized specifically for tablets and sleek netbook designs," said Erik Reid, director, Mobile Product Group at Intel. "With its low power and performance for multi-tasking, rich media and the Internet, the features and benefits of 'Oak Trail,' in combination with Micron's 2Gb 50nm DDR2 provide a powerful solution for our joint customers' design needs."

 

Micron has maintained a high-level of quality in delivering DDR2 memory for customers, offering premium performance and multiple configurations, densities, and package options. The new 50nm DDR2 product line includes:

 

• Multiple density options available in 512 megabit (Mb) to 2Gb components in X4/X8/X16 packages

 

• High-capacity module configurations ranging from 1GB to 4GB UDIMMS and SODIMMS

 

• Up to 800 megatransfers per second (MT/s) providing a migration path for higher bus speeds

 

• Supporting 1.55-volt for reducing memory system power demands

 

Availability

 

Micron is expected to begin sampling its 2Gb 50nm DDR2 device in September 2010 with production planned for Q4 2010.

 

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