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Samsung Electronics made an announcement today that it has started the mass production of 20 nanometer based DDR3 memory modules. The company is using the immersion ArF lithography to roll out 20nm based 4Gb for its most advance DDR3 memory.
Young-Hyun Jun, the executive VP of memory sales and marketing for Samsung Electronics said,"Samsung's new energy-efficient 20-nanometer DDR3 DRAM will rapidly expand its market base throughout the IT industry including the PC and mobile markets, quickly moving to mainstream status. Samsung will continue to deliver next-generation DRAM and green memory solutions ahead of the competition, while contributing to the growth of the global IT market in close cooperation with our major customers."
G.SKILL has just unveiled some ridiculously fast DDR3L SO-DIMM memory, clocking in at a DIMM-busting 2133MHz. The new super-fast set of Ripjaws RAM comes in a 16GB kit, requiring just 1.35V of power, rocking along with timings of 11-11-11-31.
G.SKILL validated its latest memory on GIGABYTE's BRIX Pro machine, which is a perfect match for this high-performance RAM. G.SKILL have called it the F3-2133C11D-16GRSL, which is quite the mouthful, but it is compatible and best used on the latest Haswell-based Core i5 and i7 processors.
A federal court in California has concluded a case against 12 DRAM manufacturers as they accused of price fixing between 1998 and 2002. The court calculated that the manufacturers will have to do a settlement that totals up to $310 million.
The case was filed by a group of US attorney generals against DRAM manufacturers including Samsung, NEC, Infineon, Hynix, Micron and Toshiba in 2007. The DRAM makers have any wrongdoing of any price fixing during those years, but have agreed to make a settlement. The attorney generals have agreed to $310 million settlement package where the money will be distributed to the public.
Earlier, Samsung had to cough out $300 million in 2005 as a settlement with US department of Justice.
Team Group, Inc. collaborated with HKEPC Laboratory for the 23rd time to make a Super Pi 1M record using TeamGroup ProjectX memory kits.
The team was able to set a new world record of 5.078 seconds for Super PI 1M scores, therefore beating the previous record of 5.094 seconds by Russia's Smoke Core. What made this very impressive is that the previous record was held for 7 months, therefore one can imagine the time, effort, co-ordination and patience it would require to get everything right to break an already impressive world record.
Now that mini-PCs from companies such as ASROCK, ASUS and Zotac are catching up, SO-DIMM overclocking is something that would be interesting to see. G.SKILL did that using ASROCK M8 Barebone system.
G.SKILL managed to do just that, as they were able to overclock its ripjaws SO-DIMM 1.35V C11 2133 MHz to 2400 MHz 12-14-14-25 @ 1.35v.
Samsung Electronics has started increasing its 25nm DRAM production with the hopes that it can grab a good share of the DRAM market while they still can. The South Korean based chipmaker is taking advantage of the situation courtesy of an accident that broke out at SK Hynix's DRAM production fab in China on September 2013.
Because of the fire that broke out in its plant, one third of the DRAM's production halted. Samsung Electronics and Micron Technology are the only DRAM chipmakers who are close enough to compensate for the production scarcity, including the production of chips for Apple Technology and GDDR5 for video cards.
CES 2014 - It's always fun to find a few diamonds in the rough at CES, and luckily this year held a few as usual. Kingston was demonstrating a whopping 384 GB's of its new DDR4 running in a blacked-out server. For those in the know, there currently isn't a publicly released CPU/chipset combination that supports DDR4 memory.
In order to recieve clearance for this demo, Kingston had to black out key areas of the chassis, which means essentially everything other than the heat sinks and DDR4 sticks. We speculate this is Grantley-EP and Wellsburg PCH. If so, the server supports Thunderbolt and features DDR4 speeds of 2400 and 3200MHz. However, these specs are pure conjecture.
Of course we tried to 'play the angles' to get a view underneath at the new unnannounced chipset. Unfortunately, Kingston delivered on their promise to Intel by making a more detailed analysis of the chipset impossible through use of the large black covers underneath the plexiglass cover.
Of course, we have the picture of the DDR4 actually up and running during the demo.
Mobile memory technology has taken a major leap forward with today's announcement of 8-gigabit low-profile double-data-rate 4 (LPDDR4) mobile DRAM chips from Samsung. The new DRAM chips offer the ability to pack 1GB on a single die, which will most likely lead to many upcoming next-gen smartphones featuring 4GB of RAM.
Samsung says that the new LPDDR4 silicon offers improved efficiency which results in up to 40-percent less power consumption than previously seen. This is possible because the chips are designed to run at just 1.1 volts each. The chips are designed on a 20nm process, which shrinks the package small enough to fit 1GB onto a single chip. With Qualcomm releasing a 64-bit mobile processor next year, and Apple's 64-bit A7 already on the market we could see a major jump in the amount of RAM smartphones house in 2014 and 2015.
"This next-generation LPDDR4 DRAM will contribute significantly to faster growth of the global mobile DRAM market, which will soon comprise the largest share of the entire DRAM market," said Young-Hyun Jun, executive vice president, memory sales & marketing, Samsung Electronics. "We will continue introducing the most advanced mobile DRAM one step ahead of the rest of the industry so that global OEMs can launch innovative mobile devices with exceptional user convenience in the timeliest manner."
We aren't quite at the DDR4 stages yet, but as we do start slotting in DDR4 onto our consumer boards, we could begin to see over the horizon, and spot a new memory standard: MRAM.
This is because the US-Japan alliance is looking for a replacement of the old DRAM technology, with over 20 companies in Japan and US joining forces to develop mass-production techniques for a next-generation chip technology. This new tech is called magnetoresistive random access memory, or MRAM. Those involved include Tokyo Electron, Shin-Etsu Chemical, Renesas Electronics, Hitachi, and US memory giant Micron Technology.
MRAM will see data stored in magnetic storage elements instead of electric charges, or current flows. MRAM will also reportedly have just one-third the power consumption of DRAM, with 10 times the capacity, and wait for it - 10 times the writing speed. This will make the technology perfect for the next, next-generation of smartphones and tablets, too.
If Crucial Memory's promotional page is anything to go by, we could expect DDR4 RAM to be released next month. But, this will require new motherboards, and even if you did that, is there a benefit?
Yes, and it's quite the improvement, and a bigger improvement than we had moving from DDR to DDR2, and even DDR2 to DDR3. DDR4 memory will use 20% less power, deliver speeds of up to 100% faster, and is 100% denser than its predecessor. Most DDR3 is around 1066MHz, but DDR4 kicks things off from 2133MHz, which is a huge increase.
Another benefit is going to be the amount of RAM per stick, with DDR3 seeing 1Gb when it was introduced, and while we have more per stick now, DDR4 will have a sweet 4Gb density. This means we should see much higher GB kits of DDR4, where we should hopefully see kits being at a minimum of 8GB, although I'd like to see 16GB. We should finally see a world of 16GB per module, which will be great for 64GB kits when Haswell-E arrives.