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Like most things in the electronics world, the smaller the build process for flash memory chips, the more storage space can be crammed onto the chips. In the CPU world, the smaller build process means less power consumption, faster speeds, and less heat.
Reuters reports that Toshiba has placed an order for new chip-making equipment that will allow it to build flash memory at sub-25nm size. Toshiba is said to be targeting 20nm construction as early as 2012.
Toshiba is reported to be investing $160 million in 2010 to build a test production line for the advanced chips. Toshiba shares rose on the news.
Samsung has just reached a new milestone in its DRAM business with word that it has begun sampling DDR3 modules with a massive 32GB on board; the highest density RDIMMs in existance at this time.
This is accomplished by using 36 dual-die 40nm 4GB DRAMs. The modules are said to operate at 1066MHz with 1.35V. The modules will allow two-way servers to be equipped with as much as 384GB of RAM and four-way servers would have the ability to harness a maximum of 2TB!
"Samsung continues to set the pace in advanced memory for high-end server applications by offering 40nm-class 32GB memory modules to reach previously unattainable levels of system capacity," said Soo-In Cho, president and general manager of Samsung Electronics' Memory Division. "In just 10 months, Samsung has now secured the best competitive advantage with the broadest portfolio of 40nm-class DDR3 based memory solutions in the industry since the 40nm-class DRAM was first produced last July."
Samsung has stated its 32GB RDIMMs will go into mass production sometime next month.
Chaintech has joined the 2400MHz memory party with some new APOGEE GT DDR3-2400 modules today that keep to 1.6v whilst running 9-11-10-27 timings. Those timings might not look all that fantastic, but with 2400MHz on tap this isn't so much of an issue. The modules can be purchased in either 1GB x 2 or 2GB x 2 kits for dual channel motherboards.
You can see from the image of the modules above, Chaintech has paired them with some unique heat-pipe equipped heatsinks for improved heat dissipation efficieny via the residing fins up top.
Chaintech's official press release on the new APOGEE GT DDR3-2400 series memory can be located here.
With a fresh new brand identity up its sleeves, well out in the open actually, the Taiwanese memory company has just announced a brand new 8GB memory kit based around its XPG Gaming Series brand of high performance RAM.
The dual channel memory kit is designed specifically for gamers with Intel P55 or H55 Express based motherboards. The memory operates at 1600MHz DDR with its timings at 9-9-9-24 at 1.55 to 1.75 volts in the power department. While the memory speed is not incredibly fast, the 8GB of RAM should provide a smooth gaming experience especially when running with the 64-bit version of Windows 7 that is able to make use of all of the memory.
The modules come with a stylish black heat spreader and should be on sale now or soon. You can find more exact details here in the press release.
You would usually except the likes of OCZ, GSkill or Corsair to come out with the fastest certified memory on the planet, but this time it is Kingston who beats the other guys to the punch with its latest HyperX DDR3 memory kit.
Kingston part number KHX2400C9D3T1K2/4GX has been certified by Intel for operation up to an incredibly fast 2400MHz on a GIGABYTE GA-P55A-UD4P motherboard. With the DIMM voltage set at 1.65 volts and the timings at 9-11-9-27, this new RAM will provide some incredibly fast memory performance numbers.
You can see the press release here.
A-DATA has just shared out details on its its new series of faster Class 10 microSDHC cards to market which give a good boost in performance for mobile phone users.
The cards come in capacities of 4, 8 and 16GB, meeting compliance with the SD Association Specification v3.00. They can deliver read and write rates of up to 16MB/sec and 10MB/sec respectively.
The cards will be available on their own or together with a standard SD sized adapter. They are backed my a lifetime warranty.
I am a big fan of PC gaming and always look forward to new video cards hitting the market to give me better graphics when I play. A new video card has turned up at CeBIT from Sapphire and the card is a beast.
The Sapphire ATI Radeon HD 5970 has 4GB of on-board memory of the GDDR5 flavor. It uses a Sapphire Arctic Cooling Accelero Xtreme cooler packed with three fans and four copper heat pipes. That massive cooler should keep the card running nice and cool.
The GPU clock is 850MHz and the memory clock is 4800MHz. The card needs a pair of 8-pin PCIe power connectors and has two DVI outputs. The card also has a pair of DisplayPort outputs too. Exactly how much the beast will cost is unknown, but it won't be cheap.
Most of us will agree that when it comes to storage, RAM, and performance more is always better. If you can get more of any one of those three items free, it is a great thing indeed.
Joystiq reports that Sony has quietly unlocked an extra 70MB of RAM for PS3 game developers to take advantage of. The extra memory comes by way of making the PS3 OS smaller. The OS was previously 120MB and was reduced to 50MB with a recent update.
It's nice to see Sony is always looking to optimize the PS3, which is still one of the best Blu-ray players around in my mind. One game dev told Joystiq that the extra RAM is nice, but gamers shouldn't expect a massive improvement in games.
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One key to getting computers that are faster and use less power is to move to ever smaller build processes for CPUs and memory components. The smaller the build process the less heat is produced and the cheaper the components are to build.
Samsung has announced what it claims to be the industry's first 30nm DDR3 DRAM. The new chips are being made in 2Gb densities and are available for 1.35V and 1.5V desktops, notebooks, and servers. The new 30nm process allows Samsung to increase productivity by 60% compared to 40nm class DRAM.
The DRAM produced with the new process also needs less power with reduced consumption of up to 30% compared to 50nm class DRAM. Samsung is developing 4GB modules using the new DRAM and mass production is set for H2 2010.