A federal court in California has concluded a case against 12 DRAM manufacturers as they accused of price fixing between 1998 and 2002. The court calculated that the manufacturers will have to do a settlement that totals up to $310 million.
The case was filed by a group of US attorney generals against DRAM manufacturers including Samsung, NEC, Infineon, Hynix, Micron and Toshiba in 2007. The DRAM makers have any wrongdoing of any price fixing during those years, but have agreed to make a settlement. The attorney generals have agreed to $310 million settlement package where the money will be distributed to the public.
Earlier, Samsung had to cough out $300 million in 2005 as a settlement with US department of Justice.
Team Group, Inc. collaborated with HKEPC Laboratory for the 23rd time to make a Super Pi 1M record using TeamGroup ProjectX memory kits.
The team was able to set a new world record of 5.078 seconds for Super PI 1M scores, therefore beating the previous record of 5.094 seconds by Russia's Smoke Core. What made this very impressive is that the previous record was held for 7 months, therefore one can imagine the time, effort, co-ordination and patience it would require to get everything right to break an already impressive world record.
Now that mini-PCs from companies such as ASROCK, ASUS and Zotac are catching up, SO-DIMM overclocking is something that would be interesting to see. G.SKILL did that using ASROCK M8 Barebone system.
G.SKILL managed to do just that, as they were able to overclock its ripjaws SO-DIMM 1.35V C11 2133 MHz to 2400 MHz 12-14-14-25 @ 1.35v.
Samsung Electronics has started increasing its 25nm DRAM production with the hopes that it can grab a good share of the DRAM market while they still can. The South Korean based chipmaker is taking advantage of the situation courtesy of an accident that broke out at SK Hynix's DRAM production fab in China on September 2013.
Because of the fire that broke out in its plant, one third of the DRAM's production halted. Samsung Electronics and Micron Technology are the only DRAM chipmakers who are close enough to compensate for the production scarcity, including the production of chips for Apple Technology and GDDR5 for video cards.
CES 2014 - It's always fun to find a few diamonds in the rough at CES, and luckily this year held a few as usual. Kingston was demonstrating a whopping 384 GB's of its new DDR4 running in a blacked-out server. For those in the know, there currently isn't a publicly released CPU/chipset combination that supports DDR4 memory.
In order to recieve clearance for this demo, Kingston had to black out key areas of the chassis, which means essentially everything other than the heat sinks and DDR4 sticks. We speculate this is Grantley-EP and Wellsburg PCH. If so, the server supports Thunderbolt and features DDR4 speeds of 2400 and 3200MHz. However, these specs are pure conjecture.
Of course we tried to 'play the angles' to get a view underneath at the new unnannounced chipset. Unfortunately, Kingston delivered on their promise to Intel by making a more detailed analysis of the chipset impossible through use of the large black covers underneath the plexiglass cover.
Of course, we have the picture of the DDR4 actually up and running during the demo.
Mobile memory technology has taken a major leap forward with today's announcement of 8-gigabit low-profile double-data-rate 4 (LPDDR4) mobile DRAM chips from Samsung. The new DRAM chips offer the ability to pack 1GB on a single die, which will most likely lead to many upcoming next-gen smartphones featuring 4GB of RAM.
Samsung says that the new LPDDR4 silicon offers improved efficiency which results in up to 40-percent less power consumption than previously seen. This is possible because the chips are designed to run at just 1.1 volts each. The chips are designed on a 20nm process, which shrinks the package small enough to fit 1GB onto a single chip. With Qualcomm releasing a 64-bit mobile processor next year, and Apple's 64-bit A7 already on the market we could see a major jump in the amount of RAM smartphones house in 2014 and 2015.
"This next-generation LPDDR4 DRAM will contribute significantly to faster growth of the global mobile DRAM market, which will soon comprise the largest share of the entire DRAM market," said Young-Hyun Jun, executive vice president, memory sales & marketing, Samsung Electronics. "We will continue introducing the most advanced mobile DRAM one step ahead of the rest of the industry so that global OEMs can launch innovative mobile devices with exceptional user convenience in the timeliest manner."
We aren't quite at the DDR4 stages yet, but as we do start slotting in DDR4 onto our consumer boards, we could begin to see over the horizon, and spot a new memory standard: MRAM.
This is because the US-Japan alliance is looking for a replacement of the old DRAM technology, with over 20 companies in Japan and US joining forces to develop mass-production techniques for a next-generation chip technology. This new tech is called magnetoresistive random access memory, or MRAM. Those involved include Tokyo Electron, Shin-Etsu Chemical, Renesas Electronics, Hitachi, and US memory giant Micron Technology.
MRAM will see data stored in magnetic storage elements instead of electric charges, or current flows. MRAM will also reportedly have just one-third the power consumption of DRAM, with 10 times the capacity, and wait for it - 10 times the writing speed. This will make the technology perfect for the next, next-generation of smartphones and tablets, too.
If Crucial Memory's promotional page is anything to go by, we could expect DDR4 RAM to be released next month. But, this will require new motherboards, and even if you did that, is there a benefit?
Yes, and it's quite the improvement, and a bigger improvement than we had moving from DDR to DDR2, and even DDR2 to DDR3. DDR4 memory will use 20% less power, deliver speeds of up to 100% faster, and is 100% denser than its predecessor. Most DDR3 is around 1066MHz, but DDR4 kicks things off from 2133MHz, which is a huge increase.
Another benefit is going to be the amount of RAM per stick, with DDR3 seeing 1Gb when it was introduced, and while we have more per stick now, DDR4 will have a sweet 4Gb density. This means we should see much higher GB kits of DDR4, where we should hopefully see kits being at a minimum of 8GB, although I'd like to see 16GB. We should finally see a world of 16GB per module, which will be great for 64GB kits when Haswell-E arrives.
Today G.Skill announced that it has expanded its RipJaws SO-DIMM line of DDR3L RAM with an new 8GB module kit that is clocked at a blazingly fast 2133MHz. The new RipJaws kit has been designed to operate at a low voltage of just 1.35V and comes in a 2x4GB configuration.
Being able to operate at 1.35V is key to compatibility with Intel Haswell-based notebooks. G.Skill says that because of this, this new module kit is the perfect upgrade solution for any Haswell-based notebook. The SO-DIMM DDR3L kits will also work with any SO-DIMM DDR3 compatible PC and is said to provide the boost in performance customers are looking for.
Today Transcend unveiled a new line of memory modules aimed at the high-end enterprise server market. The new DDR3-1866 modules come in 4GB capacities and are featured in both Registered DIMM and Unbuffered ECC DIMM profiles. Transcend says the new DRAM modules are ideal for servers running Intel's Xeon E5-2600 v2 processors for optimal performance.
The company says that each module is constructed with the highest quality DDR3-1866 DRAM chips and have a latency of 13-13-13 with an operating voltage of 1.5V. The modules are said to fully comply with JEDEC (Joint Electron Device Engineering Council) standards, which ensure the best performance, compatibility, and stability. Each of the new 4GB DDR3-1866 modules are backed by a lifetime warranty. SKUs are listed below.
Today Patriot Memory unveiled a new line of memory kits in its Viper series of high-performance RAM. Patriot says the new low-profile kits are the perfect memory kits for the extreme-performance enthusiast as well as the overclocking gurus.
The new DDR3 kits feature clock speeds of 1600MHz, 1866MHz, and 2133MHz, and are available in capacities of 8GB, 16GB, and 32GB. Patriot says the memory modules are XMP 1.3 certified and are just 1/25" tall which allows more clearance for massive CPU coolers. The kits feature heat-spreaders that are available in black, red, and blue. No information was given on pricing at the time of this writing.
Since we first broke the story about a fire last month at an SK Hynix DRAM fabrication facility, TweakTown's editors have been saying that DRAM prices will go up as a result of the damage to the plant. Just how high they would rise was a mystery until today.
A new report from TechSpot shows that on the day of the fire a 2GB capacity DRAM chip cost about $1.60. Now two months after the fire, the same Hynix chip cost a whopping $2.27. This represents a 42 percent rise in DRAM pricing.
Hynix leads the world to believe that the damage was contained to a chemical storage dock and to a ventilation system separate from the clean room fabrication environments. Unfortunately, that appears not to be the case as a bit more damage was done than it was first thought. Hynix says that they have increased production in their South Korean facility to help offset production loss, but the impact of losing one plant is evident.
Production is set to resume to normal levels next month and we should see prices trickle down once again after supply levels even off. The report says that while the fire has negatively impacted Hynix, its competitor Micron has seen their stock rise more than 23 percent since word of the fire first broke.
G.Skill has broken yet another world record in the world of high-performance memory. In just a week after the official release of Intel's Ivy Bridge-E processors, G.Skill has managed to push the limits of its quad-channel DDR3 memory to extreme limits never before seen.
G.Skill has managed to overclock a 16GB kit (4x4GB) of its TridentX line of DDR3 to an astronomical clock speed of 4072MHz. The company says this is the first instance of a quad-channel DDR3 memory kit breaking the 4GHz barrier. The amazing feat was accomplished with the aid of an Intel Core i7-4960 CPU and an ASUS Rampage IV Black Edition motherboard. The overclock was achieved with a healthy dose of extreme cooling provided by liquid nitrogen.
Earlier this week I reported on new DDR4 memory from G.Skill, and in that report I included some photos and information on a kit of DDR3 that G.Skill overclocked to an outstanding 3000MHz. Today G.Skill has sent over a video showing further proof of the stability of their DDR3 DIMMs running at 3000MHz.
The video is not very long, but you can clearly see that the DIMMs are running at the reported speed, and that things appear to be stable. This is very exciting and with this new revelation, I bet we will see some new world records coming out of the G.Skill camp very soon!
Today, Crucial announced the launch of its all-new 64GB DDR3L Load-Reduced DIMMs for use in enterprise servers. Crucial says that the new LRDIMMs enable more DIMMs per channel which is able to double the memory capacity per server, and saves companies money by not having to purchase additional machines.
These new 64GB Crucial DDR3L Load-Reduced DIMMs offer up to a 35-percent increase in memory bandwidth when compared to standard DIMMs, and are much more power efficient as they operate on 1.35V over the 1.5V standard found in other DIMMs. The company says that these new memory modules are also compatible with OEM servers and warranties which allows users to upgrade their existing infrastructures without having to shell out the cost for new systems.
"For memory-intensive server applications such as cloud computing, virtualization, and in-memory databases, optimizing the capabilities of new or existing hardware is by far a more cost-effective solution than purchasing additional servers," said Michael Moreland, worldwide DRAM product marketing manager, Crucial. "The new 64GB Crucial LRDIMMs allow servers to reach the maximum amount of installed memory possible, which can enable dramatic performance gains in memory bandwidth and overall server productivity, all while reducing power costs relative to adding additional servers."
This morning extreme performance memory manufacturer G.Skill announced the addition of 15 new DDR3 quad-channel memory kits to its award-winning RipjawsZ lineup of high-performance memory modules. The new kits are designed and optimized for Intel's new Core i7 LGA-2011 and X79 platform otherwise known as Ivy Bridge E.
G,.Skill has significantly raised the clock speeds of the new Ivey E friendly RipjawsZ quad-channel DDR3 kits to unprecedented levels. The company says that the new 16GB (4x4GB) kit will run at 2933MHz while the 64GB (8x8GB) kit speeds along at 2666MHz. In the image below you can see the 2666MHz 64GB kit validated using an Intel i7-4960X CPU on an ASUS X79-Deluxe motherboard.
Additionally G.Skill has taken advantage of the new Ivey Bridge E processors and has lab tested DDR3 memory speeds up to 3000MHz that proved to be stable on air cooling. The image below shows the company's 3000MHz 16GB proof of concept using an Intel i7-4960X and an ASUS Rampage IV Extreme motherboard.
Today ADATA announced the launch of the company's new-generation DDR4 SDRAM modules and says that they will be on display at the 2013 Intel Developer Forum being held this week in San Francisco, California. ADATA says that the new DDR4 SDRAM is targeted at server and render farm applications and that the release of this new-generation of SDRAM shows that ADATA is once again the leader of the pack in producing high-performance solutions to the enterprise market.
DDR4 SDRAM features faster clock frequencies and data transfer rates compared to the previous generation of DDR3, and features a much lower power consumption rate. The modules run it just 1.2 V and are widely expected to achieve transfer rates of 3.2Gb/s while clocked at frequencies of 2133MH all.
ADATA says that it will be showcasing the modules along with the company's other premium memory solutions at booth number 554 at IDF 2013. We have to TweakTown staffers on the ground at IDF 2013, and will be bringing you all of the latest coverage as the event progresses.
Today Samsung announced that it has began mass-producing what it says is the most advanced DDR4 memory being made for enterprise servers in next-generation data centers. Designed run a 20nm-class process the modules facilitate demand for 16Gb and 32GB capacities.
"The adoption of ultra-high-speed DDR4 in next-generation server systems this year will initiate a push toward advanced premium memory across the enterprise," said Young-Hyun Jun, executive vice president, memory sales & marketing, Samsung Electronics. "After providing cutting-edge performance with our timely supply of 16GB DDR3 earlier this year, we are continuing to extend the premium server market in 2013 and will now focus on higher density and added performance with 32GB DDR4, and contribute to even greater
growth of the green IT market in 2014."
Samsung says that the new 4Gb-based DDR4 has the fastest DRAM data transmission rate of any other module available. At 2,667Mb/s, they represent a 1.25-fold increase in performance while lowering power consumption by more than 30-percent. Samsung remains committed to advancing the development of next-generation green memory devices and solutions in IT markets. With innovative developmental approaches directed at systems, solutions and software the company will continue to reinforce its green memory strategy and maximize the creation of shared value for its customers, while facilitating further expansion of the green IT marketplace.
Today, G.Skill announced the launch of a new addition to its Ripjaws series of RAM. Dubbed the G.Skill Ripjaws DDR3 SO-DIMM, the new addition is designed for users who want to get the most out of their laptops. G.Skill says the new SO-DIMM Ripjaws modules are built using only the highest quality components and that every module is validated using G.Skill's rigorous burn-in test.
These new SO-DIMM modules are designed with performance and power efficiency in mind. Requiring only 1.35V, the new SO-DIMM Ripjaws consume less power, which in turn causes them to generate less heat than typical, higher voltage SO-DIMM memory modules. This allows your laptop's battery life to increase while its operating temperature lowers, which increases system stability.
G.Skill says that their 1.35V SO-DIMM Ripjaw kits are compatible with laptops and PCs that are equipped with Intel's 3rd and 4th generation Core i3,i5, and i7 processors that support 1.35V DDR3 SO-DIMM memory. Like all other G.Skill RAM, the Ripjaw SO-DIMM modules feature a lifetime warranty for added peace of mind.
Just when we were thinking 3000MHz DDR3 RAM was quick, ADATA had to add another 100MHz to the table. ADATA's new XPG V2 DDR 3100 memory under the XMP Profile 1 runs at 3100MHz with CAS latencies of 12-14-14-36 at 1.65V.
Not too bad at all, eh? This will give users 24,800MB/sec in bandwidth, too. The kit comes in 8GB (2 x 4GB sticks) and features Thermal Conductive Technology (TCT) thermal technology for heat dispersal. With its huge bandwidth, it could be the right choice for video and image editing professionals who need some seriously high RAM bandwidth.
Today, Apacer introduced us to some new RAM that they say will "once again bring overclocking techniques to a new level." The new ARES DDR3-3000 series is the same APACER RAM that broke records at Computex Taipei 2013 with a pair of modules reaching 3225MHz. The series includes 2800MHz, 2933MHz, and 3000MHz modules that are available in two different capacity packages. A 2x4GB and a 2x8GB kit are available to bring extreme overclocking to extreme players.
In order to achieve the most excellent and stable effect of overclocking, Apacer's ARES series overclocking memory adopts professional cooling system specially designed for overclocking which uses pure copper with thermal conductivity to conduct waste heat. Highly efficient cooling liquid would be vaporized after absorbing heat, and conduct waste heat to the large cooling fins through capillary action and the phase change principle of function. ARES series' advanced cooling system not only provides outstanding and permanent cooling effect, with no need to clean and no operating noise, thereby creating a perfect overclocking environment for game players!
Apacer says that every module of ARES RAM has been thoroughly checked to ensure that they conform to the highest standards. The ARES series features an 8-layer PCB that was specifically designed for overclocking efficiency and to provide better noise and interference reduction which can otherwise prevent world class overclocks from happening.