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USA EditionYou are located: Home > All News > RAM News > TwinMOS jump in early on DDR3 SO-DIMM

TwinMOS jump in early on DDR3 SO-DIMM

By: (more) | RAM News | Posted: Dec 6, 2007 10:30 pm

With DDR3 memory making its way into notebooks in the near future (apparently debuting on Intel's Montevina mobile platform next year), TwinMOS are jumping the gun by introducing a new high-speed DDR3-1333MHz SO-DIMM which operates at just 1.5V, a full 0.3V lower than typical DDR2 SO-DIMM modules; which means (if only slightly) better battery life to boot.

 

However, what is odd is that TwinMOS fail to deliver in their press release any information relating to what capacities the modules will come in, as well as their rated latencies. Unfortunately their website also lacks any details about them in this regard.

 

Nonetheless, you can check out the full announcement here.

 



(December 06, 2007, Taipei) The pursuit of convenience and efficiency has become a new consumer's lifestyle. For this reason, the laptop, or notebook PC, has gradually replacing desktop PC and becoming consumer's choice. Following the launch of the Windows Vista, which has higher memory storage performance requirements, memory modules with higher capacity and speed have thus become the standard requirement for consumers. However, when the speed of memory modules evolved from SDR through DDR to DDR2 and even DDR3,leading wafer manufacturers like Micron Technology, Elpida Memory and Qimonda AG had their DDR 3 chips development certified with Intel, TwinMOS R&D team remain devoted to technological and quality enhancement.

 

Further Reading: Read and find more RAM news at our RAM news index page.

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