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FMS 2014 - Chris Geiser from Samsung on 3-bit per cell V-NAND and more

FMS 2014 - Chris Geiser from Samsung on 3-bit per cell V-NAND and more (KRX:005930)

| Storage News | Posted: Aug 6, 2014 8:03 am

Flash Memory Summit 2014 - Chris Geiser, Senor Product Manager at Samsung sat down with TweakTown today to talk about the next iteration of V-NAND technology, 3-bit per cell V-NAND. Also known as TLC NAND, 3-bit per cell is a method used to increase the density of NAND flash memory by allowing the flash cell to use 8 charge states. V-NAND, also commonly referred to as 3D NAND, orders cells vertically rather than horizontally. Samsung's new 32nm 32-layer V-NAND should reduce the cost of V-NAND significantly while also ushering in higher capacity sizes.

 

 

Before the FMS 2014 show floors even open we're hearing a lot about 2TB capacity sizes coming before the end of the year. 3-bit per cell V-NAND could potentially get us there.

 

Chris Geiser also spoke with us about future interface technology such as NVMe.

 

TweakTown image news/3/9/39500_01_fms_2014_chris_geiser_from_samsung_on_3_bit_per_cell_v_nand_and_more.png

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