AMD researchers have become the first in the semiconductor industry to achieve critical research milestones for next-generation transistor development.
In lab work to be fully unveiled in June, AMD researchers have created and demonstrated a high-performance transistor that is up to 30% faster than the best published PMOS (P-channel metal-oxide semiconductor) transistor today. The transistor employs proprietary AMD technologies involving what is commonly referred to as Fully Depleted Silicon-on-Insulator.
In related research, AMD researchers have also become the first in the industry to demonstrate a strained silicon transistor achieving 20-25% higher performance than conventional strained silicon devices through the successful use of metal gates. More information @ AMD
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