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Toshiba set to start sub-25nm flash memory construction line in 2010

Toshiba set to build sub-25nm flash

| RAM News | Posted: Apr 5, 2010 5:06 pm

Like most things in the electronics world, the smaller the build process for flash memory chips, the more storage space can be crammed onto the chips. In the CPU world, the smaller build process means less power consumption, faster speeds, and less heat.

 

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Reuters reports that Toshiba has placed an order for new chip-making equipment that will allow it to build flash memory at sub-25nm size. Toshiba is said to be targeting 20nm construction as early as 2012.

 

Toshiba is reported to be investing $160 million in 2010 to build a test production line for the advanced chips. Toshiba shares rose on the news.

 

NEWS SOURCE
Reuters.com

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