Tech content trusted by users in North America and around the world
7,254 Reviews & Articles | 52,655 News Posts

TSCM announces 28nm High-k Metal gate for 2010

Foundry fight to get interesting
By: Sean Kalinich | Business, Financial & Legal News | Posted: Aug 25, 2009 3:15 pm

The Foundry race jut heated up; TSMC just announced the production of 64MB SRAM on three 28nm process nodes. This roughly matches the same timeline that Global Foundries is looking to keep.


So far the time line puts the three nodes up and running in risk production by Q3. The Low Power process should be in risk production by the end of Q1 2010 while the High-K metal gate low power and performance versions will be out in Q1 and Q3 respectively.


TSMC says that they have managed to get their High-K Metal Gate Process going by using a "gate last" method. They claim this will make theirs superior in terms of transistor characteristics, performance and manufacturability.


I am not sure what the results of this will be but I am sure the bidding for nVidia's business will be very interesting for the 28nm process next year.


TSCM announced 28nm High-k Metal gate for 2010



Related Tags

Got an opinion on this news? Post a comment below!