Conclusion: The V-NAND Advantage
According to the July 4, 2014, Gartner "Forecast: Memory, Worldwide, 2011-2018, 2Q14 Update,"1 the global memory market is expected to grow from $75.5 billion in revenues to approximately $79.7 billion by 2017, while its NAND flash portion will continue to rapidly increase to reach a more than 50 percent share, or about $44.6 billion, by 2017. Samsung predicts that over the next ten years, V-NAND technology will triple the percentage of mobile devices employing flash, and double the number of enterprise systems that utilize flash technology. This rapid expansion of products utilizing NAND will provide Samsung with a significant advantage in production of their computing and storage devices.
V-NAND works around all of the major challenges associated with increasing NAND density by stepping back to a reliable process, and vertically stacking NAND cells to increase storage capacity; all without increasing the silicon footprint.
The advent of new SSD-focused form factors, such as M.2, has highlighted the need for more storage density. M.2 devices will power the next generation of PCs, laptops, and mobile devices, but the small design doesn't provide as much room for components. Advances such as V-NAND will be required to provide ample storage capacity in our ever-shrinking computing products.
SSDs are also evolving as system connectivity changes. The venerable SATA interface provides entry-level performance, but for larger systems, NVM Express is emerging as the choice. NVMe is an extension of PCIe feature set, providing backward compatibility with SATA plus an opportunity to move to higher performance. NVMe takes advantage of better parallelism and threading by utilizing deeper command queues and improved interrupt steering.
V-NAND performance is critical to achieving the potential for NVMe moving forward. The use of NVMe, PCIe, and M.2 interfaces will unlock the true speed potential of V-NAND, which is faster than typical planar NAND.
1 Gartner "Forecast: Memory, Worldwide, 2011-2018, 2Q14 Update" by Brady Wang, Andrew Norwood, Joseph Unsworth, July 4, 2014
The inherent design advantages of V-NAND provide increased endurance, lower power consumption, and enhanced performance. The benefits of vertical integration are key to quickly developing and deploying new storage solutions that implement V-NAND. Samsung's ability to produce their own proprietary controllers, and complete control of all components used in final SSD production, enhances interoperability, and speeds time to market.
Samsung has held the leadership position in the memory market for 20 years through constant innovation, and a focus on delivering value to the consumer. Current planar NAND designs feature a maximum density of 128Gbit per chip, but V-NAND is expected to enable up to 1Tb per chip by 2017.
Samsung has led the way for 3-bit per cell NAND products with their popular 840 EVO products, and 24-layer V-NAND has already been shipping into OEM and enterprise applications, proving its performance and reliability in real-world usage. Perhaps the most telling aspect of V-NAND durability and reliability is the expansion of the warranty period for the 32-layer V-NAND Samsung 850 PRO. This new generation of cutting-edge SSDs delivers not only the highest performance on the market, but also an outstanding ten-year warranty.
Solving the scaling challenge required innovative thinking that goes against the traditional thinking in NAND fabrication and design. The end result are products that feature faster speed, robust endurance, enhanced reliability, lower power consumption, and increased warranty periods. Samsung's continued evolution of their industry-leading 32-layer V-NAND will power the future of storage technology for years to come.
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- Page 1 [Introduction: The V-NAND Paradigm Shift]
- Page 2 [Scaling Challenges of Planar (2D) NAND]
- Page 3 [An Innovative Solution: 3D V-NAND]
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